Direct observation of voids in the vacancy excess region of ion bombarded silicon

Evolution of voids in Al-implanted ZnO probed by a slow positron beam

Undoped ZnO single crystals were implanted with aluminum ions up to a dose of 10Al/cm. Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters, which are close to the size of V8, are generated by implantation. Postimplantation annealing shows that the Doppler broadening S parameter...

Insights for void formation in ion-implanted Ge

a r t i c l e i n f o The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20–300 keV to doses of 1.0 × 10 13 –1.0 × 10 17 cm − 2. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤ 120 keV at a dose of 2.0 × 10 15 cm − 2 and complete...

Atomistic Determination of Continuum Mechanical Properties of Ion-Bombarded Silicon

Highly disordered, ion-processed silicon is studied using a molecular dynamics simulation with empirical interatomic potentials. The surface free energy density, stress-strain relations, and continuum surface features of silicon, bombarded in the simulations to relatively high fluence by medium energy argon ions, are computed statistically by preparing multiple randomized ion-bombarded specimen...

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Vacancy engineering by He induced nanovoids in crystalline Si

Positron annihilation spectroscopy (PAS) in the Doppler broadening mode is used to study the effects of He and B implantation, and subsequent annealing on the vacancy profile of crystalline Si. The existence of two void layers, one consisting of large voids at the projected range (Rp) of He and another containing ‘nanovoids’ slightly larger than divacancies at roughly halfway between Rp of He a...